напряжение затвор-подложка
-
Обозначение
UЗП
UGB
[ГОСТ 19095-73]
Англо-русский словарь нормативно-технической терминологии. academic.ru. 2015.
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
напряжение затвор-подложка — Обозначение UЗП UGB [ГОСТ 19095 73] Тематики полупроводниковые приборы EN gate substrate (d. c.) voltage DE Gate Substrat Spannung FR tension (continue) grille substrat … Справочник технического переводчика
Programmable read-only memory — D23128C PROM on the board of ZX Spectrum Computer memory types Volatile RAM DRAM (e.g., DD … Wikipedia
transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… … Universalium
Photolithography — For earlier uses of photolithography in printing, see Lithography. For the same process applied to metal, see Photochemical machining. Photolithography (or optical lithography ) is a process used in microfabrication to selectively remove parts of … Wikipedia
Clock feedthrough — In analog electronics, Clock feedthrough is the result of the coupling between control signals on the analog switch and analog signal passing through the switch. In digital electronics, clock feedthrough is the coupling of the clock signal to the … Wikipedia
максимально допустимое напряжение затвор-подложка — Обозначение UЗПmax UGBmax [ГОСТ 19095 73] Тематики полупроводниковые приборы EN maximum gate substrate voltage DE maximal zulässige Gate Bulk Spannung FR tension maximale grille substrate … Справочник технического переводчика
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
